CSD25401Q3 データシート Ti

CSD25401Q3 - TI の商品詳細ページです。

1
No Image
2営業日以内に回答いたします

CSD25401Q3 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番CSD25401Q3
メーカーTI
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 60 A
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.0182 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.8 W
Pulsed Drain Current-Max (IDM) 82 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

CSD25401Q3のレビュー

CSD25401Q3 のご注文について