| 型番 | CSD23201W10 |
|---|
| メーカー | TI |
|---|
| データシート |  |
| Configuration |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min |
12 V |
| Drain Current-Max (Abs) (ID) |
1.1 A |
| Drain Current-Max (ID) |
2.2 A |
| Drain-source On Resistance-Max |
0.138 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) |
42 pF |
| JESD-30 Code |
S-PBGA-B4 |
| JESD-609 Code |
e1 |
| Moisture Sensitivity Level |
1 |
| Number of Elements |
1 |
| Number of Terminals |
4 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
SQUARE |
| Package Style |
GRID ARRAY Meter |
| Peak Reflow Temperature (Cel) |
260 |
| Polarity/Channel Type |
P-CHANNEL |
| Power Dissipation-Max (Abs) |
1 W |
| Qualification Status |
Not Qualified |
| Sub Category |
Other Transistors |
| Surface Mount |
YES |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Form |
BALL |
| Terminal Position |
BOTTOM |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
CSD23201W10 - TI の商品詳細ページです。