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CSD19536KTT
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CSD19536KTT の詳細情報
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- メーカー情報
| 型番 | CSD19536KTT |
|---|---|
| メーカー | TI |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 806 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 200 A |
| Drain-source On Resistance-Max | 0.0028 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 61 pF |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 2 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 Cel |
| Operating Temperature-Min | -55 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 400 A |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | Texas Instruments Incorporated. |
|---|---|
| 設立 | 1930 |
| 資本金 | USD 816 million |
| 所在地 | 12500 TI Boulevard Dallas, Texas 75243 USA |
| URL | http://www.ti.com/ |
CSD19536KTTのレビュー
CSD19536KTT のご注文について
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045-263-9989
CSD19536KTT - TI の商品詳細ページです。