CSD19532Q5BT Ti

CSD19532Q5BT - TI の商品詳細ページです。

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CSD19532Q5BT の詳細情報

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型番CSD19532Q5BT
メーカーTI
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 274 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.0057 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 18 pF
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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