CSD19531Q5A Ti

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CSD19531Q5A の詳細情報

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型番CSD19531Q5A
メーカーTI
カテゴリMOSFET
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Description 100V 10mm2 SON5x6、CSD19531Q5A
Drain Current-Max (Abs) (ID) 100 A
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.0078 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 16.9 pF
ID, Continuous Drain Current at Ta=25degC(A) 16
ID, Silicon limited at Tc=25degC(A) 110
IDM, Max Pulsed Drain Current(Max)(A) 337
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Logic Level No
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package SON5x6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 337 A
QG Typ(nC) 37
Rds(on) Max at VGS=10V(mOhms) 6.4
Rds(on) Max at VGS=4.5V(mOhms)
Status ACTIVE
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
VDS(V) 100
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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