CSD17579Q3A Ti

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CSD17579Q3A の詳細情報

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型番CSD17579Q3A
メーカーTI
カテゴリMOSFET
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 14 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Description CSD17579Q3A 30 V、N‐チャネル NexFET パワー MOSFET
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.0142 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 49 pF
ID, Continuous Drain Current at Ta=25degC(A) 11
ID, Silicon limited at Tc=25degC(A) 39
IDM, Max Pulsed Drain Current(Max)(A) 106
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Logic Level Yes
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package SON3x3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 106 A
QG Typ(nC) 5.3
Rds(on) Max at VGS=10V(mOhms) 10.2
Rds(on) Max at VGS=4.5V(mOhms) 14.2
Status ACTIVE
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
VDS(V) 30
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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