CSD17483F4 Ti

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CSD17483F4 の詳細情報

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型番CSD17483F4
メーカーTI
カテゴリMOSFET
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 30 V
Description 30V、N チャネル NexFET™ パワー MOSFET、CSD17483F4
Drain Current-Max (Abs) (ID) 1.5 A
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.55 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3 pF
ID, Continuous Drain Current at Ta=25degC(A) 1.5
ID, Silicon limited at Tc=25degC(A)
IDM, Max Pulsed Drain Current(Max)(A) 5
JESD-30 Code R-XBCC-N3
JESD-609 Code e4
Logic Level Yes
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package LGA 1.0 x 0.6mm
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Pulsed Drain Current-Max (IDM) 5 A
QG Typ(nC) 1.01
Rds(on) Max at VGS=10V(mOhms) 230
Rds(on) Max at VGS=4.5V(mOhms) 260
Status ACTIVE
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Nickel/Gold (Ni/Au)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
VDS(V) 30
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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