CSD17311Q5 データシート Ti

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CSD17311Q5 の詳細情報

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型番CSD17311Q5
メーカーTI
カテゴリMOSFET
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 638 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Description 30V、N チャネル NexFET™ パワー MOSFET
Drain Current-Max (Abs) (ID) 100 A
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.0031 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 110 pF
ID, Continuous Drain Current at Ta=25degC(A) 32
ID, Silicon limited at Tc=25degC(A)
IDM, Max Pulsed Drain Current(Max)(A) 200
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Logic Level Yes
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package SON5x6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.2 W
Pulsed Drain Current-Max (IDM) 200 A
QG Typ(nC) 24
Qualification Status Not Qualified
Rds(on) Max at VGS=10V(mOhms)
Rds(on) Max at VGS=4.5V(mOhms) 2.3
Status ACTIVE
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
VDS(V) 30
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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