CSD17309Q3 データシート

Name: CSD17309Q3
Brand: TI
SKU: 130402694-0000-0000-0000

CSD17309Q3 - TI の商品詳細ページです。

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CSD17309Q3 の詳細情報

型番	CSD17309Q3
メーカー	TI
カテゴリ	MOSFET
データシート
Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	162 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V
Description	30V、N チャネル NexFET™ パワー MOSFET
Drain Current-Max (Abs) (ID)	60 A
Drain Current-Max (ID)	20 A
Drain-source On Resistance-Max	0.0085 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	56 pF
ID, Continuous Drain Current at Ta=25degC(A)	20
ID, Silicon limited at Tc=25degC(A)
IDM, Max Pulsed Drain Current(Max)(A)	112
JESD-30 Code	R-PDSO-N8
JESD-609 Code	e3
Logic Level	Yes
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	8
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Operating Temperature-Min	-55 Cel
Package	SON3x3
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	2.8 W
Pulsed Drain Current-Max (IDM)	112 A
QG Typ(nC)	7.5
Qualification Status	Not Qualified
Rds(on) Max at VGS=10V(mOhms)
Rds(on) Max at VGS=4.5V(mOhms)	6.3
Status	ACTIVE
Sub Category	FET General Purpose Power
Surface Mount	YES
Terminal Finish	Matte Tin (Sn)
Terminal Form	NO LEAD
Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING
Transistor Element Material	SILICON
VDS(V)	30