CSD16301Q2 データシート Ti

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CSD16301Q2 の詳細情報

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型番CSD16301Q2
メーカーTI
カテゴリMOSFET
データシートProduct_list_pdf
Avalanche Energy Rating (Eas) 10 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 25 V
Description N チャネル NexFET™ パワー MOSFET
Drain Current-Max (Abs) (ID) 5 A
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.034 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 17 pF
ID, Continuous Drain Current at Ta=25degC(A) 5
ID, Silicon limited at Tc=25degC(A)
IDM, Max Pulsed Drain Current(Max)(A) 20
JESD-30 Code R-PDSO-N6
JESD-609 Code e4
Logic Level Yes
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package SON2x2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.3 W
Pulsed Drain Current-Max (IDM) 20 A
QG Typ(nC) 2
Qualification Status Not Qualified
Rds(on) Max at VGS=10V(mOhms)
Rds(on) Max at VGS=4.5V(mOhms) 29
Status ACTIVE
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
VDS(V) 25
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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