| 型番 | UPA1970TE |
|---|
| メーカー | RENESAS |
|---|
| カテゴリ | スイッチ-その他IC |
|---|
| データシート |  |
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
20 V |
| Drain Current-Max (Abs) (ID) |
2.2 A |
| Drain Current-Max (ID) |
2.2 A |
| Drain-source On Resistance-Max |
0.107 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code |
R-PDSO-G6 |
| JESD-609 Code |
e0 |
| Number of Elements |
2 |
| Number of Terminals |
6 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) |
260 |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
1.15 W |
| Pulsed Drain Current-Max (IDM) |
8.8 A |
| Qualification Status |
Not Qualified |
| Sub Category |
FET General Purpose Power |
| Surface Mount |
YES |
| Terminal Finish |
MATTE TIN |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Time@Peak Reflow Temperature-Max (s) |
10 |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
UPA1970TE - RENESAS の商品詳細ページです。