| 型番 | UPA1552H |
|---|
| メーカー | RENESAS |
|---|
| データシート |  |
| Configuration |
COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
60 V |
| Drain Current-Max (Abs) (ID) |
5 A |
| Drain Current-Max (ID) |
5 A |
| Drain-source On Resistance-Max |
0.35 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code |
R-PSIP-T10 |
| JESD-609 Code |
e0 |
| Number of Elements |
4 |
| Number of Terminals |
10 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
IN-LINE Meter |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
3.5 W |
| Pulsed Drain Current-Max (IDM) |
20 A |
| Qualification Status |
Not Qualified |
| Sub Category |
FET General Purpose Power |
| Surface Mount |
NO |
| Terminal Finish |
TIN LEAD |
| Terminal Form |
THROUGH-HOLE |
| Terminal Position |
SINGLE |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
UPA1552H - RENESAS の商品詳細ページです。