RQK0609CQDQSTL-E データシート

Name: RQK0609CQDQSTL-E
Brand: RENESAS
SKU: 280395509-0000-0000-0000

RQK0609CQDQSTL-E - RENESAS の商品詳細ページです。

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RQK0609CQDQSTL-E の詳細情報

型番	RQK0609CQDQSTL-E
メーカー	RENESAS
データシート
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V
Drain Current-Max (Abs) (ID)	4 A
Drain Current-Max (ID)	4 A
Drain-source On Resistance-Max	0.125 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-F3
JESD-609 Code	e6
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE Meter
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	1.5 W
Pulsed Drain Current-Max (IDM)	12 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	YES
Terminal Finish	TIN BISMUTH
Terminal Form	FLAT
Terminal Position	SINGLE
Transistor Application	SWITCHING
Transistor Element Material	SILICON