型番 | R1RW0416DSB-0PR |
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メーカー | RENESAS |
カテゴリ | SRAM |
データシート | ![]() |
Access Time-Max | 10 ns |
I/O Type | COMMON |
JESD-30 Code | R-PDSO-G44 |
Memory Density | 4194304 bit |
Memory IC Type | STANDARD SRAM |
Memory Width | 16 |
Moisture Sensitivity Level | 3 |
Number of Functions | 1 |
Number of Terminals | 44 |
Number of Words | 262144 words |
Number of Words Code | 256K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 70 Cel |
Operating Temperature-Min | 0 Cel |
Organization | 256KX16 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | SOP |
Package Equivalence Code | TSOP44,.46,32 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies | 3.3 V |
Qualification Status | Not Qualified |
Standby Current-Max | 0.005 Amp |
Standby Voltage-Min | 3 V |
Sub Category | SRAMs |
Supply Current-Max | 0.145 mA |
Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V |
Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | COMMERCIAL |
Terminal Form | GULL WING |
Terminal Pitch | 0.8 mm |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
会社名称 | ルネサス エレクトロニクス株式会社 |
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設立 | 2002年11月1日 |
資本金 | 100億円 |
所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
URL | http://am.renesas.com/ |
R1RW0416DSB-0PR - RENESAS の商品詳細ページです。