| 型番 | R1LV1616HBG-4SI#B0 |
|---|---|
| メーカー | RENESAS |
| データシート | ![]() |
| Access Time-Max | 45 ns |
| JESD-30 Code | R-PBGA-B48 |
| Memory Density | 16777216 bit |
| Memory IC Type | STANDARD SRAM |
| Memory Width | 16 |
| Moisture Sensitivity Level | 3 |
| Number of Functions | 1 |
| Number of Terminals | 48 |
| Number of Words | 1048576 words |
| Number of Words Code | 1M |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 1MX16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | BGA |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY Meter |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Supply Voltage-Nom (Vsup) | 3 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | BALL |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| 会社名称 | ルネサス エレクトロニクス株式会社 |
|---|---|
| 設立 | 2002年11月1日 |
| 資本金 | 100億円 |
| 所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
| URL | http://am.renesas.com/ |
R1LV1616HBG-4SI#B0 - RENESAS の商品詳細ページです。