型番 | R1EV58256BTDRBI#B0 |
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メーカー | RENESAS |
データシート | ![]() |
Access Time-Max | 120 ns |
JESD-30 Code | R-PDSO-G32 |
Length | 12.4 mm |
Memory Density | 262144 bit |
Memory IC Type | EEPROM |
Memory Width | 8 |
Moisture Sensitivity Level | 3 |
Number of Functions | 1 |
Number of Terminals | 32 |
Number of Words | 32768 words |
Number of Words Code | 32K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 32KX8 |
Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP1 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE Meter |
Parallel/Serial | PARALLEL |
Programming Voltage | 3 V |
Seated Height-Max | 1.2 mm |
Supply Voltage-Max (Vsup) | 5.5 V |
Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Form | GULL WING |
Terminal Pitch | 0.5 mm |
Terminal Position | DUAL |
Width | 8 mm |
Write Cycle Time-Max (tWC) | 10 ms |
会社名称 | ルネサス エレクトロニクス株式会社 |
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設立 | 2002年11月1日 |
資本金 | 100億円 |
所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
URL | http://am.renesas.com/ |
R1EV58256BTDRBI#B0 - RENESAS の商品詳細ページです。