| 型番 | NP75P03YDG-E1-AY |
|---|---|
| メーカー | RENESAS |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (Abs) (ID) | 75 A |
| Drain Current-Max (ID) | 75 A |
| Drain-source On Resistance-Max | 0.0096 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 700 pF |
| JESD-30 Code | R-PDSO-F8 |
| Number of Elements | 1 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 138 W |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | ルネサス エレクトロニクス株式会社 |
|---|---|
| 設立 | 2002年11月1日 |
| 資本金 | 100億円 |
| 所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
| URL | http://am.renesas.com/ |
NP75P03YDG-E1-AY - RENESAS の商品詳細ページです。