| 型番 | NP35N04YLG-E1-AY |
|---|
| メーカー | RENESAS |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Case Connection |
DRAIN |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
40 V |
| Drain Current-Max (Abs) (ID) |
35 A |
| Drain Current-Max (ID) |
35 A |
| Drain-source On Resistance-Max |
0.015 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) |
220 pF |
| JESD-30 Code |
R-PDSO-F8 |
| Number of Elements |
1 |
| Number of Terminals |
8 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
175 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
77 W |
| Sub Category |
FET General Purpose Power |
| Surface Mount |
YES |
| Terminal Form |
FLAT |
| Terminal Position |
DUAL |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
NP35N04YLG-E1-AY - RENESAS の商品詳細ページです。