NP110N04PUJ-E1B-AY

Name: NP110N04PUJ-E1B-AY
Brand: RENESAS
SKU: 240099704-0000-0000-0000

NP110N04PUJ-E1B-AY - RENESAS の商品詳細ページです。

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NP110N04PUJ-E1B-AY の詳細情報

型番	NP110N04PUJ-E1B-AY
メーカー	RENESAS
Avalanche Energy Rating (Eas)	518 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	40 V
Drain Current-Max (Abs) (ID)	110 A
Drain Current-Max (ID)	110 A
Drain-source On Resistance-Max	0.0018 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3
Number of Elements	1
Number of Terminals	2
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE Meter
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	288 W
Pulsed Drain Current-Max (IDM)	440 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	YES
Terminal Finish	PURE TIN
Terminal Form	GULL WING
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING
Transistor Element Material	SILICON