NE5520379A データシート

Name: NE5520379A
Brand: RENESAS
SKU: 240121659-0000-0000-0000

NE5520379A - RENESAS の商品詳細ページです。

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NE5520379A の詳細情報

型番	NE5520379A
メーカー	RENESAS
データシート
Case Connection	SOURCE
Configuration	SINGLE
DS Breakdown Voltage-Min	3.8 V
Drain Current-Max (Abs) (ID)	1.5 A
Drain Current-Max (ID)	1.5 A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band	L BAND
JESD-30 Code	R-PQMW-F4
JESD-609 Code	e0
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	4
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	85 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	MICROWAVE Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	6 W
Pulsed Drain Current-Max (IDM)	3 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	YES
Terminal Finish	TIN LEAD
Terminal Form	FLAT
Terminal Position	QUAD
Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	AMPLIFIER
Transistor Element Material	SILICON