









| 型番 | NE5520279A-T1-A |
|---|---|
| メーカー | RENESAS |
| データシート | ![]() |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 6 V |
| Drain Current-Max (Abs) (ID) | 0.6 A |
| Drain Current-Max (ID) | 0.6 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | L BAND |
| JESD-30 Code | R-PQFP-F4 |
| JESD-609 Code | e0 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 125 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLATPACK Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 12.5 W |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Terminal Form | FLAT |
| Terminal Position | QUAD |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| 会社名称 | ルネサス エレクトロニクス株式会社 |
|---|---|
| 設立 | 2002年11月1日 |
| 資本金 | 100億円 |
| 所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
| URL | http://am.renesas.com/ |
NE5520279A-T1-A - RENESAS の商品詳細ページです。