NE5520279A データシート

Name: NE5520279A
Brand: RENESAS
SKU: 240121658-0000-0000-0000

NE5520279A - RENESAS の商品詳細ページです。

175時間58分後以内に見積もり依頼を頂ければ、
05月08日(水) 9:00 までに見積もり回答いたします。

検討リストに追加する

NE5520279A の詳細情報

型番	NE5520279A
メーカー	RENESAS
データシート
Case Connection	SOURCE
Configuration	SINGLE
DS Breakdown Voltage-Min	6 V
Drain Current-Max (Abs) (ID)	0.6 A
Drain Current-Max (ID)	0.6 A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band	L BAND
JESD-30 Code	R-PQFP-F4
JESD-609 Code	e0
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	4
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	125 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLATPACK Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	12.5 W
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	YES
Terminal Finish	Tin/Bismuth (Sn/Bi)
Terminal Form	FLAT
Terminal Position	QUAD
Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	AMPLIFIER
Transistor Element Material	SILICON