NE3210S01-T1B データシート

Name: NE3210S01-T1B
Brand: RENESAS
SKU: 240123228-0000-0000-0000

NE3210S01-T1B - RENESAS の商品詳細ページです。

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NE3210S01-T1B の詳細情報

型番	NE3210S01-T1B
メーカー	RENESAS
データシート
Additional Feature	HIGH RELIABILITY
Case Connection	SOURCE
Configuration	SINGLE
DS Breakdown Voltage-Min	3 V
Drain Current-Max (Abs) (ID)	0.07 A
Drain Current-Max (ID)	0.015 A
FET Technology	HETERO-JUNCTION
Highest Frequency Band	KU BAND
JESD-30 Code	O-PRDB-G4
JESD-609 Code	e0
Number of Elements	1
Number of Terminals	4
Operating Mode	DEPLETION MODE
Operating Temperature-Max	125 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	ROUND
Package Style	DISK BUTTON Meter
Peak Reflow Temperature (Cel)	230
Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	0.165 W
Power Gain-Min (Gp)	12 dB
Qualification Status	Not Qualified
Sub Category	FET RF Small Signal
Surface Mount	YES
Terminal Finish	TIN LEAD
Terminal Form	GULL WING
Terminal Position	RADIAL
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	AMPLIFIER
Transistor Element Material	GALLIUM ARSENIDE