- 半導体デバイス・電子部品TOP
- メーカー一覧
- RENESAS
- NE3210S01
- 半導体デバイス・電子部品TOP
- カテゴリ一覧
- RF
- NE3210S01
NE3210S01
データシート
1
No Image
-
- 個
２営業日以内に回答いたします
NE3210S01 の詳細情報
- 仕様・詳細
- メーカー情報
| 型番 | NE3210S01 |
|---|---|
| メーカー | RENESAS |
| カテゴリ | RF |
| データシート |  |
| Additional Feature | HIGH RELIABILITY |
| Application | X to Ku-Band |
| CG(dB) | - |
| Case Connection | SOURCE |
| CircuitCurrent(mA) | - |
| Ciss(pF)typ. | - |
| Cob(pF)max. | - |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 3 V |
| Device type | GaAs FET |
| Divideratio | - |
| Drain Current-Max (Abs) (ID) | 0.07 A |
| Drain Current-Max (ID) | 0.015 A |
| FET Technology | HETERO-JUNCTION |
| Frequency(MHz)max. | - |
| Frequency(MHz)min. | - |
| Function | LNA,HJ-FET |
| GCR(dB) | - |
| GL(dB) | - |
| GMAX(dB) | - |
| Ga(dB)typ. | 13.5 |
| Gp(dB) | - |
| Grouping | Low Noise |
| Gv(dB) | - |
| Highest Frequency Band | KU BAND |
| IDD(mA) | - |
| IDSS(mA)max. | 70 |
| IDSS(mA)min. | 15 |
| ID[A] | - |
| IM3(dBc) | - |
| ISL D/U(dB) | - |
| ISL(dB) | - |
| Ic(A) | - |
| Ic2(A) | - |
| JESD-30 Code | O-PRDB-G4 |
| JESD-609 Code | e0 |
| Lins(dB) | - |
| NF(dB)typ. | 0.35 |
| NF2(dB)typ. | - |
| NPN/PNP | - |
| Nch/Pch | Nch |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Nv(dB) | - |
| OIP3(dBm) | - |
| Operating Mode | DEPLETION MODE |
| Operating Temperature-Max | 125 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | DISK BUTTON Meter |
| Pc(W) | - |
| Pch(W) | - |
| Peak Reflow Temperature (Cel) | 230 |
| Pin at Pout(mW) | - |
| Pin(0.1dB) | - |
| Pin1dB(dBm) | - |
| Polarity/Channel Type | N-CHANNEL |
| Posat(dBm) | - |
| Pout (W)typ. | - |
| Power Dissipation Ambient-Max | 0.165 W |
| Power Gain-Min (Gp) | 12 dB |
| Qualification Status | Not Qualified |
| Sub Category | FET RF Small Signal |
| Surface Mount | YES |
| Switch type | - |
| Targetapplication | BS/CS LNB |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Position | RADIAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
| VCE(sat)(V) | - |
| VCEO2(V) | - |
| VCEO[V] | - |
| VDD at Pout(V) | - |
| VDD(V) | - |
| VDS(V)max. | - |
| VDSS(V) max. | - |
| VDS[V] | 4 |
| Vo(Vp-p) | - |
| Voltage(V)max. | - |
| Voltage(V)min. | - |
| Voltage(V)typ. | - |
| f at CG(MHz) | - |
| f at GCR(MHz) | - |
| f at GL(MHz) | - |
| f at GMAX(MHz) | - |
| f at Ga(GHz) | 12 |
| f at Gp(GHz) | - |
| f at IIP3(MHz) | - |
| f at ISL D/U(GHz) | - |
| f at ISL(GHz) | - |
| f at Lins(GHz) | - |
| f at NF(GHz) | 12 |
| f at NF(MHz) | - |
| f at NV(MHz) | - |
| f at OIP3(MHz) | - |
| f at Pin(GHz) | - |
| f at Pin1dB(GHz) | - |
| f at Po(MHz) | - |
| f at Posat(GHz) | - |
| f at Pout(GHz) | - |
| f at Pout(MHz) | - |
| fT(GHz)typ. | - |
| fT2(GHz)typ. | - |
| hFEmax. | - |
| hFEmin. | - |
| |yfs|(S)typ. | - |
| ステータス | 量産中 |
| 備考 | - |
| 発注制約 | - |
| 会社名称 | ルネサス エレクトロニクス株式会社 |
|---|---|
| 設立 | 2002年11月1日 |
| 資本金 | 100億円 |
| 所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
| URL | http://am.renesas.com/ |
NE3210S01のレビュー
NE3210S01 のご注文について
050-3612-7934
045-263-9989
NE3210S01 - RENESAS の商品詳細ページです。