| 型番 | N0301N-T1-AT |
|---|
| メーカー | RENESAS |
|---|
| データシート |  |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
30 V |
| Drain Current-Max (Abs) (ID) |
4.5 A |
| Drain Current-Max (ID) |
4.5 A |
| Drain-source On Resistance-Max |
0.13 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code |
R-PDSO-F3 |
| Number of Elements |
1 |
| Number of Terminals |
3 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
1.3 W |
| Sub Category |
FET General Purpose Power |
| Surface Mount |
YES |
| Terminal Form |
FLAT |
| Terminal Position |
DUAL |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
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