HN58V65AT-10 データシート Renesas

HN58V65AT-10 - RENESAS の商品詳細ページです。

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HN58V65AT-10 の詳細情報

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型番HN58V65AT-10
メーカーRENESAS
データシートProduct_list_pdf
Access Time-Max 100 ns
Additional Feature 100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION; 32 BYTE PAGE WRITE
Command User Interface NO
Data Polling YES
Data Retention Time-Min 10
JESD-30 Code R-PDSO-G28
JESD-609 Code e0
Length 11.8 mm
Memory Density 65536 bit
Memory IC Type EEPROM
Memory Width 8
Moisture Sensitivity Level 1
Number of Functions 1
Number of Terminals 28
Number of Words 8192 words
Number of Words Code 8K
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 Cel
Operating Temperature-Min -20 Cel
Organization 8KX8
Package Body Material PLASTIC/EPOXY
Package Code TSOP1
Package Equivalence Code TSSOP28,.53,22
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE Meter
Page Size 64 words
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 225
Power Supplies 3/5 V
Programming Voltage 3 V
Qualification Status Not Qualified
Ready/Busy YES
Seated Height-Max 1.2 mm
Standby Current-Max 5.0E-6 Amp
Sub Category EEPROMs
Supply Current-Max 0.025 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.55 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Toggle Bit YES
Width 8 mm
Write Cycle Time-Max (tWC) 10 ms
会社名称ルネサス エレクトロニクス株式会社
設立2002年11月1日
資本金100億円
所在地135-0061 東京都江東区豊洲三丁目2番24号
URLhttp://am.renesas.com/

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