型番 | HN58C257AT-85 |
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メーカー | RENESAS |
データシート | ![]() |
Access Time-Max | 85 ns |
Additional Feature | 100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS; SOFTWARE DATA PROTECTION |
Command User Interface | NO |
Data Polling | YES |
Data Retention Time-Min | 10 |
JESD-30 Code | R-PDSO-G32 |
JESD-609 Code | e0 |
Length | 12.4 mm |
Memory Density | 262144 bit |
Memory IC Type | EEPROM |
Memory Width | 8 |
Moisture Sensitivity Level | 3 |
Number of Functions | 1 |
Number of Terminals | 32 |
Number of Words | 32768 words |
Number of Words Code | 32K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 70 Cel |
Operating Temperature-Min | 0 Cel |
Organization | 32KX8 |
Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP1 |
Package Equivalence Code | TSSOP32,.56,20 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE Meter |
Page Size | 64 words |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | 260 |
Power Supplies | 5 V |
Programming Voltage | 5 V |
Qualification Status | Not Qualified |
Ready/Busy | YES |
Seated Height-Max | 1.2 mm |
Standby Current-Max | 2.0E-5 Amp |
Sub Category | EEPROMs |
Supply Current-Max | 0.03 mA |
Supply Voltage-Max (Vsup) | 5.5 V |
Supply Voltage-Min (Vsup) | 4.5 V |
Supply Voltage-Nom (Vsup) | 5 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | COMMERCIAL |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | GULL WING |
Terminal Pitch | 0.5 mm |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Toggle Bit | YES |
Width | 8 mm |
Write Cycle Time-Max (tWC) | 10 ms |
会社名称 | ルネサス エレクトロニクス株式会社 |
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設立 | 2002年11月1日 |
資本金 | 100億円 |
所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
URL | http://am.renesas.com/ |
HN58C257AT-85 - RENESAS の商品詳細ページです。