| 型番 | HAT3021R-EL-E | 
|---|---|
| メーカー | RENESAS | 
| データシート | ![]()  | 
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 
| DS Breakdown Voltage-Min | 80 V | 
| Drain Current-Max (Abs) (ID) | 2.6 A | 
| Drain Current-Max (ID) | 3.4 A | 
| Drain-source On Resistance-Max | 0.145 ohm | 
| FET Technology | METAL-OXIDE SEMICONDUCTOR | 
| JESD-30 Code | R-PDSO-G8 | 
| Moisture Sensitivity Level | 1 | 
| Number of Elements | 2 | 
| Number of Terminals | 8 | 
| Operating Mode | ENHANCEMENT MODE | 
| Operating Temperature-Max | 150 Cel | 
| Package Body Material | PLASTIC/EPOXY | 
| Package Shape | RECTANGULAR | 
| Package Style | SMALL OUTLINE Meter | 
| Peak Reflow Temperature (Cel) | 260 | 
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | 
| Power Dissipation-Max (Abs) | 1.5 W | 
| Pulsed Drain Current-Max (IDM) | 20.4 A | 
| Qualification Status | Not Qualified | 
| Sub Category | Other Transistors | 
| Surface Mount | YES | 
| Terminal Form | GULL WING | 
| Terminal Position | DUAL | 
| Time@Peak Reflow Temperature-Max (s) | 20 | 
| Transistor Application | SWITCHING | 
| Transistor Element Material | SILICON | 
| 会社名称 | ルネサス エレクトロニクス株式会社 | 
|---|---|
| 設立 | 2002年11月1日 | 
| 資本金 | 100億円 | 
| 所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 | 
| URL | http://am.renesas.com/ | 
HAT3021R-EL-E - RENESAS の商品詳細ページです。