H7P1002DL-E データシート

Name: H7P1002DL-E
Brand: RENESAS
SKU: 180137077-0000-0000-0000

H7P1002DL-E - RENESAS の商品詳細ページです。

No Image

２営業日以内に回答いたします

H7P1002DL-E の詳細情報

型番	H7P1002DL-E
メーカー	RENESAS
データシート
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V
Drain Current-Max (Abs) (ID)	15 A
Drain Current-Max (ID)	15 A
Drain-source On Resistance-Max	0.15 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	120 pF
JESD-30 Code	R-PSIP-T3
JESD-609 Code	e6
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	IN-LINE Meter
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	30 W
Pulsed Drain Current-Max (IDM)	60 A
Qualification Status	Not Qualified
Sub Category	Other Transistors
Surface Mount	NO
Terminal Finish	Tin/Bismuth (Sn/Bi)
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING
Transistor Element Material	SILICON