| 型番 | H7N0308AB-E |
|---|
| メーカー | RENESAS |
| Case Connection |
DRAIN |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
30 V |
| Drain Current-Max (Abs) (ID) |
70 A |
| Drain Current-Max (ID) |
70 A |
| Drain-source On Resistance-Max |
0.0085 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code |
TO-220AB |
| JESD-30 Code |
R-PSFM-T3 |
| JESD-609 Code |
e2 |
| Moisture Sensitivity Level |
1 |
| Number of Elements |
1 |
| Number of Terminals |
3 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT Meter |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
100 W |
| Pulsed Drain Current-Max (IDM) |
280 A |
| Qualification Status |
Not Qualified |
| Sub Category |
FET General Purpose Power |
| Surface Mount |
NO |
| Terminal Finish |
TIN COPPER |
| Terminal Form |
THROUGH-HOLE |
| Terminal Position |
SINGLE |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
H7N0308AB-E - RENESAS の商品詳細ページです。