H5N2509P-E データシート

Name: H5N2509P-E
Brand: RENESAS
SKU: 180065741-0000-0000-0000

H5N2509P-E - RENESAS の商品詳細ページです。

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H5N2509P-E の詳細情報

型番	H5N2509P-E
メーカー	RENESAS
データシート
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	250 V
Drain Current-Max (Abs) (ID)	30 A
Drain Current-Max (ID)	30 A
Drain-source On Resistance-Max	0.069 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSFM-T3
JESD-609 Code	e2
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT Meter
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	150 W
Pulsed Drain Current-Max (IDM)	120 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	NO
Terminal Finish	Tin/Copper (Sn/Cu)
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING
Transistor Element Material	SILICON