| 型番 | FN1A4P |
|---|
| メーカー | RENESAS |
|---|
| データシート |  |
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 4.7 |
| Collector Current-Max (IC) |
0.1 A |
| Collector-emitter Voltage-Max |
50 V |
| Configuration |
SINGLE WITH BUILT-IN RESISTOR |
| DC Current Gain-Min (hFE) |
85 |
| JESD-30 Code |
R-PDSO-G3 |
| JESD-609 Code |
e0 |
| Number of Elements |
1 |
| Number of Terminals |
3 |
| Operating Temperature-Max |
150 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Polarity/Channel Type |
PNP |
| Power Dissipation-Max (Abs) |
0.2 W |
| Qualification Status |
Not Qualified |
| Sub Category |
BIP General Purpose Small Signal |
| Surface Mount |
YES |
| Terminal Finish |
TIN BISMUTH |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
| Turn-off Time-Max (toff) |
6000 ns |
| Turn-on Time-Max (ton) |
200 ns |
| VCEsat-Max |
0.2 V |
FN1A4P - RENESAS の商品詳細ページです。