| 型番 | BB503CCS-TL-E |
|---|
| メーカー | RENESAS |
|---|
| データシート |  |
| Additional Feature |
LOW NOISE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
6 V |
| Drain Current-Max (ID) |
0.02 A |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) |
0.05 pF |
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code |
R-PDSO-G4 |
| JESD-609 Code |
e6 |
| Moisture Sensitivity Level |
1 |
| Number of Elements |
1 |
| Number of Terminals |
4 |
| Operating Mode |
DUAL GATE, ENHANCEMENT MODE |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) |
260 |
| Polarity/Channel Type |
N-CHANNEL |
| Power Gain-Min (Gp) |
17 dB |
| Qualification Status |
Not Qualified |
| Surface Mount |
YES |
| Terminal Finish |
Tin/Bismuth (Sn/Bi) |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Time@Peak Reflow Temperature-Max (s) |
20 |
| Transistor Application |
AMPLIFIER |
| Transistor Element Material |
SILICON |
BB503CCS-TL-E - RENESAS の商品詳細ページです。