型番 | 71256L25TDB |
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メーカー | RENESAS |
Access Time-Max | 25 ns |
I/O Type | COMMON |
JESD-30 Code | R-CDIP-T28 |
JESD-609 Code | e0 |
Length | 37.1475 mm |
Memory Density | 262144 bit |
Memory IC Type | STANDARD SRAM |
Memory Width | 8 |
Moisture Sensitivity Level | 1 |
Number of Functions | 1 |
Number of Terminals | 28 |
Number of Words | 32768 words |
Number of Words Code | 32K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 125 Cel |
Operating Temperature-Min | -55 Cel |
Organization | 32KX8 |
Output Characteristics | 3-STATE |
Output Enable | YES |
Package Body Material | CERAMIC, GLASS-SEALED |
Package Code | DIP |
Package Equivalence Code | DIP28,.3 |
Package Shape | RECTANGULAR |
Package Style | IN-LINE Meter |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | 240 |
Power Supplies | 5 V |
Qualification Status | Not Qualified |
Screening Level | MIL-STD-883 Class B |
Seated Height-Max | 5.08 mm |
Standby Current-Max | 0.0005 Amp |
Standby Voltage-Min | 2 V |
Sub Category | SRAMs |
Supply Current-Max | 0.115 mA |
Supply Voltage-Max (Vsup) | 5.5 V |
Supply Voltage-Min (Vsup) | 4.5 V |
Supply Voltage-Nom (Vsup) | 5 V |
Surface Mount | NO |
Technology | CMOS |
Temperature Grade | MILITARY |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | THROUGH-HOLE |
Terminal Pitch | 2.54 mm |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Width | 7.62 mm |
会社名称 | ルネサス エレクトロニクス株式会社 |
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設立 | 2002年11月1日 |
資本金 | 100億円 |
所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
URL | http://am.renesas.com/ |
71256L25TDB - RENESAS の商品詳細ページです。