| 型番 | 4AM11 |
|---|---|
| メーカー | RENESAS |
| データシート | ![]() |
| Configuration | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (Abs) (ID) | 5 A |
| Drain Current-Max (ID) | 5 A |
| Drain-source On Resistance-Max | 0.24 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSIP-T10 |
| Number of Elements | 4 |
| Number of Terminals | 10 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE Meter |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Power Dissipation-Max (Abs) | 28 W |
| Pulsed Drain Current-Max (IDM) | 20 A |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | ルネサス エレクトロニクス株式会社 |
|---|---|
| 設立 | 2002年11月1日 |
| 資本金 | 100億円 |
| 所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
| URL | http://am.renesas.com/ |
4AM11 - RENESAS の商品詳細ページです。