型番 | 3SK317 |
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メーカー | RENESAS |
データシート | ![]() |
Additional Feature | LOW NOISE |
Case Connection | SOURCE |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 14 V |
Drain Current-Max (Abs) (ID) | 0.025 A |
Drain Current-Max (ID) | 0.025 A |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 0.04 pF |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
JESD-30 Code | R-PDSO-G4 |
JESD-609 Code | e6 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DEPLETION MODE |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.1 W |
Power Gain-Min (Gp) | 12 dB |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | YES |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 20 |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
会社名称 | ルネサス エレクトロニクス株式会社 |
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設立 | 2002年11月1日 |
資本金 | 100億円 |
所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
URL | http://am.renesas.com/ |
3SK317 - RENESAS の商品詳細ページです。