2SK3390IXTB-E データシート

Name: 2SK3390IXTB-E
Brand: RENESAS
SKU: 30225798-0000-0000-0000

2SK3390IXTB-E - RENESAS の商品詳細ページです。

No Image

２営業日以内に回答いたします

Nチャネル電界効果型トランジスタ

2SK3390IXTB-E の詳細情報

型番	2SK3390IXTB-E
メーカー	RENESAS
種別	Nチャネルトランジスタ
データシート
Case Connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	17 V
Drain Current-Max (Abs) (ID)	1 A
Drain Current-Max (ID)	1 A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
JESD-30 Code	R-PDSO-G2
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	2
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	20 W
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	YES
Terminal Form	GULL WING
Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	20
Transistor Application	AMPLIFIER
Transistor Element Material	SILICON