NPN型バイポーラトランジスタ | 高周波用|末尾A:鉛フリー品
型番 | 2SC4226-T1-A |
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メーカー | RENESAS |
カテゴリ | RF |
種別 | バイポーラトランジスタ |
データシート | ![]() |
Additional Feature | LOW NOISE |
Application | UHF |
CG(dB) | - |
CircuitCurrent(mA) | - |
Ciss(pF)typ. | - |
Cob(pF)max. | - |
Collector Current-Max (IC) | 0.1 A |
Collector-base Capacitance-Max | 1.5 pF |
Collector-emitter Voltage-Max | 12 V |
Configuration | SINGLE |
DC Current Gain-Min (hFE) | 40 |
Device type | Bipolar |
Divideratio | - |
Frequency(MHz)max. | - |
Frequency(MHz)min. | - |
Function | Bip. Tr. |
GCR(dB) | - |
GL(dB) | - |
GMAX(dB) | - |
Ga(dB)typ. | - |
Gp(dB) | - |
Grouping | Low Noise |
Gv(dB) | - |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
IDD(mA) | - |
IDSS(mA)max. | - |
IDSS(mA)min. | - |
ID[A] | - |
IM3(dBc) | - |
ISL D/U(dB) | - |
ISL(dB) | - |
Ic(A) | 0.1 |
Ic2(A) | - |
JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e6 |
Lins(dB) | - |
Moisture Sensitivity Level | 1 |
NF(dB)typ. | 1.2 |
NF2(dB)typ. | - |
NPN/PNP | NPN |
Nch/Pch | - |
Number of Elements | 1 |
Number of Terminals | 3 |
Nv(dB) | - |
OIP3(dBm) | - |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Pc(W) | - |
Pch(W) | - |
Peak Reflow Temperature (Cel) | 260 |
Pin at Pout(mW) | - |
Pin(0.1dB) | - |
Pin1dB(dBm) | - |
Polarity/Channel Type | NPN |
Posat(dBm) | - |
Pout (W)typ. | - |
Power Dissipation-Max (Abs) | 0.15 W |
Qualification Status | Not Qualified |
Sub Category | Other Transistors |
Surface Mount | YES |
Switch type | - |
Targetapplication | General Purpose,TV Tuner,Smart meter |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 10 |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 3000 MHz |
VCE(sat)(V) | - |
VCEO2(V) | - |
VCEO[V] | 12 |
VDD at Pout(V) | - |
VDD(V) | - |
VDS(V)max. | - |
VDSS(V) max. | - |
VDS[V] | - |
Vo(Vp-p) | - |
Voltage(V)max. | - |
Voltage(V)min. | - |
Voltage(V)typ. | - |
f at CG(MHz) | - |
f at GCR(MHz) | - |
f at GL(MHz) | - |
f at GMAX(MHz) | - |
f at Ga(GHz) | - |
f at Gp(GHz) | - |
f at IIP3(MHz) | - |
f at ISL D/U(GHz) | - |
f at ISL(GHz) | - |
f at Lins(GHz) | - |
f at NF(GHz) | 1 |
f at NF(MHz) | - |
f at NV(MHz) | - |
f at OIP3(MHz) | - |
f at Pin(GHz) | - |
f at Pin1dB(GHz) | - |
f at Po(MHz) | - |
f at Posat(GHz) | - |
f at Pout(GHz) | - |
f at Pout(MHz) | - |
fT(GHz)typ. | 4.5 |
fT2(GHz)typ. | - |
hFEmax. | 250 |
hFEmin. | 40 |
|yfs|(S)typ. | - |
ステータス | 量産中 |
備考 | - |
発注制約 | - |
会社名称 | ルネサス エレクトロニクス株式会社 |
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設立 | 2002年11月1日 |
資本金 | 100億円 |
所在地 | 135-0061 東京都江東区豊洲三丁目2番24号 |
URL | http://am.renesas.com/ |
2SC4226-T1-A - RENESAS の商品詳細ページです。