TN5335K1-G Microchip

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TN5335K1-G の詳細情報

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型番TN5335K1-G
メーカーMICROCHIP
Application SWITCHING
Configuration SINGLE WITH BUILT-IN DIODE
DLA Qualification Not Qualified
DS Breakdown Voltage-Min 350 V
DS Breakdown Voltage-Min (V) 350
Drain Current-Max (ID) 0.11 A
Drain Current-Max (ID) (A) 0.11
Drain-source On Resistance-Max 15 ohm
Drain-source On Resistance-Max (ohm) 15
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 22 pF
Feedback Cap-Max (Crss) (pF) 22
J-STD-609 Code e3
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max (W) 0.36
Power Dissipation-Max (Abs) 0.36 W
Power Dissipation-Max (W) 0.36
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Microchip Technology Inc.
所在地2355 West Chandler Blvd. Chandler, Arizona, USA 85224-6199
URLhttp://www.microchip.com/

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