TN2540N3-G Microchip

TN2540N3-G - MICROCHIP の商品詳細ページです。

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TN2540N3-G の詳細情報

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型番TN2540N3-G
メーカーMICROCHIP
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Application SWITCHING
Configuration SINGLE WITH BUILT-IN DIODE
DLA Qualification Not Qualified
DS Breakdown Voltage-Min 400 V
DS Breakdown Voltage-Min (V) 400
Drain Current-Max (Abs) (ID) 0.175 A
Drain Current-Max (Abs) (ID) (A) 0.175
Drain Current-Max (ID) 0.175 A
Drain Current-Max (ID) (A) 0.175
Drain-source On Resistance-Max 12 ohm
Drain-source On Resistance-Max (ohm) 12
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF
Feedback Cap-Max (Crss) (pF) 25
J-STD-609 Code e3
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Max (Cel) 150
Operating Temperature-Min -55 Cel
Operating Temperature-Min (Cel) -55
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max (W) 1
Power Dissipation-Max (Abs) 0.74 W
Power Dissipation-Max (W) 1
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Microchip Technology Inc.
所在地2355 West Chandler Blvd. Chandler, Arizona, USA 85224-6199
URLhttp://www.microchip.com/

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