









| 型番 | TC8220K6-G |
|---|---|
| メーカー | MICROCHIP |
| Additional Feature | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD |
| Application | SWITCHING |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| DLA Qualification | Not Qualified |
| DS Breakdown Voltage-Min | 200 V |
| DS Breakdown Voltage-Min (V) | 200 |
| Drain-source On Resistance-Max | 7 ohm |
| Drain-source On Resistance-Max (ohm) | 6 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) (pF) | 2 |
| J-STD-609 Code | e4 |
| JESD-30 Code | R-PDSO-N12 |
| Number of Elements | 4 |
| Number of Terminals | 12 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max (Cel) | 150 |
| Operating Temperature-Min (Cel) | -55 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | NICKEL PALLADIUM GOLD |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) (ns) | 35 |
| Turn-on Time-Max (ton) (ns) | 25 |
| 会社名称 | Microchip Technology Inc. |
|---|---|
| 所在地 | 2355 West Chandler Blvd. Chandler, Arizona, USA 85224-6199 |
| URL | http://www.microchip.com/ |
TC8220K6-G - MICROCHIP の商品詳細ページです。