LND150N3-G Microchip

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LND150N3-G の詳細情報

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型番LND150N3-G
メーカーMICROCHIP
Additional Feature HIGH INPUT IMPEDANCE
Application SWITCHING
Configuration SINGLE WITH BUILT-IN DIODE
DLA Qualification Not Qualified
DS Breakdown Voltage-Min 500 V
DS Breakdown Voltage-Min (V) 500
Drain Current-Max (ID) 0.03 A
Drain Current-Max (ID) (A) 0.03
Drain-source On Resistance-Max 1000 ohm
Drain-source On Resistance-Max (ohm) 1000
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1 pF
Feedback Cap-Max (Crss) (pF) 1
J-STD-609 Code e3
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Max (Cel) 150
Operating Temperature-Min -55 Cel
Operating Temperature-Min (Cel) -55
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1 W
Power Dissipation Ambient-Max (W) 0.74
Power Dissipation-Max (W) 0.74
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Microchip Technology Inc.
所在地2355 West Chandler Blvd. Chandler, Arizona, USA 85224-6199
URLhttp://www.microchip.com/

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