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LND150K1-G
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LND150K1-G の詳細情報
- 仕様・詳細
- メーカー情報
| 型番 | LND150K1-G |
|---|---|
| メーカー | MICROCHIP |
| Application | SWITCHING |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DLA Qualification | Not Qualified |
| DS Breakdown Voltage-Min (V) | 500 |
| Drain Current-Max (ID) | 0.013 A |
| Drain Current-Max (ID) (A) | 0.013 |
| Drain-source On Resistance-Max | 1000 ohm |
| Drain-source On Resistance-Max (ohm) | 1000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 1 pF |
| Feedback Cap-Max (Crss) (pF) | 1 |
| J-STD-609 Code | e3 |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | DEPLETION MODE |
| Operating Temperature-Max | 150 Cel |
| Operating Temperature-Max (Cel) | 150 |
| Operating Temperature-Min | -55 Cel |
| Operating Temperature-Min (Cel) | -55 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max (W) | 0.36 |
| Power Dissipation-Max (W) | 0.36 |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | Microchip Technology Inc. |
|---|---|
| 所在地 | 2355 West Chandler Blvd. Chandler, Arizona, USA 85224-6199 |
| URL | http://www.microchip.com/ |
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045-263-9989
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