DN2625DK6-G Microchip

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DN2625DK6-G の詳細情報

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型番DN2625DK6-G
メーカーMICROCHIP
Additional Feature LOW THRESHOLD
Application SWITCHING
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS
DLA Qualification Not Qualified
DS Breakdown Voltage-Min 250 V
DS Breakdown Voltage-Min (V) 250
Drain Current-Max (ID) 1.1 A
Drain Current-Max (ID) (A) 1.1
Drain-source On Resistance-Max 3.5 ohm
Drain-source On Resistance-Max (ohm) 3.5
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 70 pF
Feedback Cap-Max (Crss) (pF) 70
J-STD-609 Code e3
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Number of Elements 1
Number of Terminals 8
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Max (Cel) 150
Operating Temperature-Min -55 Cel
Operating Temperature-Min (Cel) -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 3.3 A
Pulsed Drain Current-Max (IDM) (A) 3.3
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 30 ns
Turn-off Time-Max (toff) (ns) 30
Turn-on Time-Max (ton) 30 ns
Turn-on Time-Max (ton) (ns) 30
会社名称Microchip Technology Inc.
所在地2355 West Chandler Blvd. Chandler, Arizona, USA 85224-6199
URLhttp://www.microchip.com/

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