









| 型番 | KF4N20LD-RTF/HS |
|---|---|
| メーカー | KEC |
| Avalanche Energy Rating (Eas) | 52 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (ID) | 3.6 A |
| Drain-source On Resistance-Max | 1.1 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 7 A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | 株式会社KEC |
|---|---|
| 設立 | 2011年2月 |
| 資本金 | 1,000万円 |
| 所在地 | 141-0022 東京都品川区東五反田2-2-3 |
| URL | http://www.kecj.co.jp/ |
KF4N20LD-RTF/HS - KEC の商品詳細ページです。