VMO550-01F Ixys

VMO550-01F - IXYS の商品詳細ページです。

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VMO550-01F の詳細情報

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型番VMO550-01F
メーカーIXYS
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 590 A
Drain Current-Max (ID) 590 A
Drain-source On Resistance-Max 0.0021 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2200 W
Pulsed Drain Current-Max (IDM) 2360 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称IXYS Corporation
設立1983
所在地1590 Buckeye Drive Milpitas, CA 95035
URLhttp://www.ixys.com/

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