型番 | VMO1600-02P |
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メーカー | IXYS |
データシート | ![]() |
Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (Abs) (ID) | 1900 A |
Drain Current-Max (ID) | 1900 A |
Drain-source On Resistance-Max | 0.00165 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-XUFM-X4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | IXYS Corporation |
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設立 | 1983 |
所在地 | 1590 Buckeye Drive Milpitas, CA 95035 |
URL | http://www.ixys.com/ |
VMO1600-02P - IXYS の商品詳細ページです。