IXTP160N10T データシート Ixys

IXTP160N10T - IXYS の商品詳細ページです。

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IXTP160N10T の詳細情報

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型番IXTP160N10T
メーカーIXYS
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 160 A
Drain Current-Max (ID) 160 A
Drain-source On Resistance-Max 0.007 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 135 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 430 W
Pulsed Drain Current-Max (IDM) 430 A
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称IXYS Corporation
設立1983
所在地1590 Buckeye Drive Milpitas, CA 95035
URLhttp://www.ixys.com/

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