IXTN600N04T2 データシート Ixys

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IXTN600N04T2 の詳細情報

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型番IXTN600N04T2
メーカーIXYS
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (Abs) (ID) 600 A
Drain Current-Max (ID) 600 A
Drain-source On Resistance-Max 0.00105 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1470 pF
JESD-30 Code R-PUFM-X4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 940 W
Pulsed Drain Current-Max (IDM) 1800 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称IXYS Corporation
設立1983
所在地1590 Buckeye Drive Milpitas, CA 95035
URLhttp://www.ixys.com/

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