IXTH20N60 データシート Ixys

IXTH20N60 - IXYS の商品詳細ページです。

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IXTH20N60 の詳細情報

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型番IXTH20N60
メーカーIXYS
データシートProduct_list_pdf
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 20 A
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.35 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 300 W
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称IXYS Corporation
設立1983
所在地1590 Buckeye Drive Milpitas, CA 95035
URLhttp://www.ixys.com/

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